Data storage
Various memory technologies have emerged throughout history. Today, the
discovery of new technologies and new materials over the past two decades has
helped to manufacture memories devices, less bulky, less expensive,
less energy, but always with a larger capacity and higher speed data transfer.
The Meeting
This symposium over three (3) days, will permit :
- to round up specialists in this research field (theoretical and experimental),
- to discover the scientific community and research in the University of Picardie,
- to review the history of the evolution of storage memories and their implementation in physics and electronic devices, in computer memory to the younger generation today, through various scientific presentations.
Collaborations
These three days will also allow us to soak up what is currently in fundamental scientific research on memories of the future, to reinforce collaborations.
This conference will allow us to meet also industrial actors and to create links with the professional world partners; in order to generate employment, directly related to Scientific Research.
|
Key Speakers
New Multiferroics: GaFeO3 and BaFe12O19Prof. J. F. Scott
Depts. of Chemistry and Physics
St. Andrews University
St. Andrews, Scotland KY16 9ST
Bioorganic Nanodots Memory Storage Devices Prof. Gil Rosenman
School of Electrical Engineering,
Tel Aviv University, Israel
www.eng.tau.ac.il/~gilr
Flexoelectric Memories
Prof. Gustau Catalan
ICREA Research Professor,
Institut Catala de Nanociencia i Nanotecnologia
Espana
Magnetoelectric domain control in multiferroic TbMnO3
Dr. Nadir Aliouane
Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institute, 5232 Villigen, Switzerland
On the crystal structures and phase diagrams in perovskites and TTB-type compounds
Prof. Pierre Saint-Grégoire
University of Nîmes,
Department of Sciences and Arts,
30021 Nimes cedex 01, France
|